description applications the spn6561 is the dual n-channel enhancement mode power field effect transistors are produced using high cell density , dmos trench technology. this high density process is especially tailored to minimize on-state resistance and provide superior switching performance. these devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. z power management in note book z portable equipment z battery powered system z dc/dc converter z load switch z dsc z lcd display inverter features pin configuration( sot-23-6l ) part marking ? n-channel 30v/2.8a,r ds(on) = 60m ? @v gs =10v 30v/2.3a,r ds(on) = 80m ? @v gs =4.5v ? super high density cell design for extremely low rds (on) ? exceptional on-resistance and maximum dc current capability ? sot-23-6l package design spn6561 smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
pin description pin symbol description 1 g1 gate 1 2 s2 source 2 3 g2 gate 2 4 d2 drain 2 5 s1 source 1 6 d1 drain1 ordering information part number package part marking SPN6561S26RG sot-23-6l 61yw week code : a ~ z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) SPN6561S26RG : tape reel ; pb ? free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss 30 v gate ?source voltage v gss 20 v t a =25 2.8 continuous drain current(t j =150 ) t a =70 i d 2.3 a pulsed drain current i dm 10 a continuous source current(diode conduction) i s 1.25 a t a =25 1.15 power dissipation t a =70 p d 0.75 w operating junction temperature t j -55/150 storage temperature range t stg -55/150 t 10sec 50 thermal resistance-junction to ambient steady state r ja 90 /w spn6561 smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
spn6561 electrical characteristics (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 30 gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 1.0 3.0 v gate leakage current i gss v ds =0v,v gs =20v 100 na v ds =30v,v gs =1.0v 1 zero gate voltage drain current i dss v ds =30v,v gs =0.0v t j =55 10 ua v ds R 4.5v,v gs =10v 6 on-state drain current i d(on) v ds R 4.5v,v gs =4.5v 4 a v gs = 10v,i d =2.8a 0.043 0.060 drain-source on-resistance r ds(on) v gs =4.5v,i d =2.1a 0.056 0.080 ? forward transconductance gfs v ds =4.5v,i d =2.5a 4.6 s diode forward voltage v sd i s =1.25a,v gs =0v 0.8 1.2 v dynamic total gate charge q g 4.5 10 gate-source charge q gs 0.8 gate-drain charge q gd v ds =15v gs =10v i d 2.5 1.0 nc input capacitance c iss 240 output capacitance c oss 110 reverse transfer capacitance c rss v ds =15v gs =0v f=1mhz 17 pf t d(on) 8 20 turn-on time t r 12 30 t d(off) 17 35 turn-off time t f v dd =15r l =15 i d 1.0a,v gen =10 r g =6 ? 8 20 ns smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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